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| Preliminary Data Sheet IXSH15N120A IGBT "S" Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 82 Clamped inductive load, L = 100 H TJ = 125C, VCE = 720 V; VGE = 15V, RG = 82 TC = 25C Maximum Ratings 1200 1200 20 30 30 15 60 ICM = 30 @ 0.8 VCES 5 150 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-247AD G C E s W C C C Features *2 Mounting torque . 1.15/10 Nm/lb-in. 6 300 g C generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications nd Max. Lead Temperature for Soldering (1.6mm from case for 10s) * AC motor speed control * DC servo and robot drives * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies Symbol Test Conditions (TJ = 25C unless otherwise specified) BV CES V GE(th) I CES I GES V CE(sat) IC IC = 3.0 mA, V GE = 0 V = 1.5 mA, VCE = VGE TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 1200 4 8 V V * DC choppers Advantages * Easy to mount (isolated mounting * hole) Reduces assembly time and cost VCE = 0.8 VCES , VGE= 0 V Note 2 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V 200 A 1 mA + 100 nA 4.0 V (c)1996 IXYS Corporation. All rights reserved. 95586(7/96) IXSH15N120A Symbol Test Conditions (T J = 25C unless otherwise specified) gfs I C = IC90, VCE = 10 V, Pulse test, t < 300 s, duty cycle < 2 % VGE = 15V, VCE = 10 V VCE = 25 V, VGE = 0 V, f = 1 MHz Characteristic Values Min Typ. Max. 6 7 S TO-247AD (IXSH) IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri E(on) td(off) tfi Eoff RthJC RthCK Notes: 65 1800 160 45 75 20 35 100 200 450 600 5.4 100 200 1.1 650 900 14.5 A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W K/W IC = Ic90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C I C = IC90, VGE = 15 V, L = 100H RG = 82 , VCLAMP = 0.8 VCES Note 1 Inductive load, TJ = 125C I C = IC90, VGE = 15 V, L = 100H RG = 82 VCLAMP = 0.8 VCES Note 1 0.25 1.) Switching times may increase for V CE (Clamp) > 0.8 VCES, higher TJ or RG values. 2.) Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Data contained herein reflects measurements and characterization data from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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